continental device india limited data sheet page 1 of 4 pnp silicon planar epitaxial transistors amplifier transistors absolute maximum ratings rating rating rating rating rating symbol symbol symbol symbol symbol BC212L bc214l unit unit unit unit unit collector emitter voltage v ceo 50 30 v collector base voltage v cbo 60 45 v emitter base voltage v ebo -5 -v collector current continuous i c - 100 - ma total power dissipation ta=25 c p d - 350 - mw derate above 25 c - 2.8 - mw/ c total power dissipation tc=25 c p d -1 -w derate above 25 c - 8.0 - mw/ c operating & storage junction t j ,t stg -55 to +150 c temperature range thermal resistance junction to ambient r th(j-a) - 357 - c/w junction to case r th(j-c) - 125 - c/w BC212L, BC212La, BC212Lb bc214l, bc214lb, bc214lc 1 = emitter 2 = collector 3 = base dim min max a 4,32 5,33 b 4,45 5,20 c 3,18 4,19 d 0,41 0,55 e 0,35 0,50 f 5 deg g 1,14 1,40 h 1,14 1,53 k 12,70 ? l 1.982 2.082 all dimensions in m.m. 1 2 3 e c b to-92 plastic package continental device india limited an iso/ts 16949, iso 9001 and iso 14001 certified company
continental device india limited data sheet page 2 of 4 electrical characteristics (ta=25c unless otherwise specified)
collector emitter voltage i c =2ma, i b =0 BC212L bv ceo 50 - - v bc214l 30 - - v collector base voltage i c =10ua, i e =0 BC212L bv cbo 60 - - v bc214l 45 - - v emitter base voltage i e =10ua, i c =0 bv ebo 5-- v collector cutoff current v cb =30v, i e =0 i cbo --15na emitter cutoff current v eb =4v, i c =0 i ebo --15na dc current gain i c =10ua, v ce =5v BC212L h fe 40 - - - bc214l 100 - - - i c =2ma, v ce =5v BC212L 60 - - - bc214l 140 - 600 - i c =100ma, v ce =5v* - 120 - - collector emitter sat. voltage v ce(sat) - 0.10 - v i c =10ma, i b =0.5ma - 0.25 0.6 v i c =100ma, i b =5ma* base emitter sat. voltage v be(sat) - 1.00 1.4 v i c =100ma, i b =5ma base emitter on voltage v be(on) 0.60 0.62 0.72 v i c =2ma, v ce =5v dynamic characteristics transition frequency i c =10ma, v ce =5v, f=50mhz BC212L f t - 280 - mhz bc214l - 320 - mhz output capacitance v cb =10v, i e =0,f=1mhz c ob - - 6.0 pf noise figure i c =200ua, v ce =5v, r s =2k ? ?
continental device india limited data sheet page 3 of 4
small signal current gain i c =2ma, v ce =5v, f=1khz BC212L h fe 60 - - - bc214l 140 - - - a 100 - 300 - b 200 - 400 - c 350 - 600 - * pulse test : pulse width
continental device india limited data sheet page 4 of 4 notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd is believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-579 6150 fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com
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